存储芯片制造商闪迪今日盘中大涨5.09%，引起了市场的广泛关注。
消息面上，闪迪在技术研发与资本市场层面同时获得重大利好。一方面，公司正加速推进高带宽闪存（HBF）的商业化进程，计划于2026年下半年建成试产线，并于2027年实现量产。HBF技术被视为AI推理时代的关键存储层级，通过在NAND闪存中引入硅通孔（TSV）堆叠封装，可在维持高带宽的同时提供约10倍于HBM的存储容量，战略价值显著。
另一方面，纳斯达克公司宣布，闪迪将于4月20日开盘前取代Atlassian公司，正式加入纳斯达克100指数。此次纳入预计将为公司带来更高的市场知名度和流动性，并可能引发追踪该指数的基金进行配置性买入。与此同时，包括杰富瑞、花旗集团、Cantor Fitzgerald在内的多家华尔街机构近期纷纷上调闪迪的目标价，反映出市场对其在AI驱动存储需求增长背景下的长期前景持乐观态度。
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