Samsung Semiconductor exhibited multiple high-specification solid-state drive products at the Flash Memory Summit 2025 held earlier this month. In the ultra-high capacity segment, Samsung introduced a 256TB product dubbed "MVP."

The device utilizes an EDSFF standard connector (with dimensions suggesting it may be E3.L form factor based on its aspect ratio), featuring a C-shaped PCB connected by flexible cables linking two sections. The drive contains 64 NAND flash chips and 9 DRAM chips.

Currently, among major NAND flash manufacturers, Kioxia, SanDisk, and Micron have all announced products capable of reaching 256TB capacity (the LC9, DC SN670, and 6600 ION respectively). Samsung's official model designation is expected to be released soon.

For high-performance datacenter-grade solid-state drives, Samsung showcased the new PG9G3, a PCIe 5.0×4 interface product designed to succeed the PM9D3a.

The PG9G3 complies with NVMe 2.1, NVMe-MI 2.0, and OCP NVMe 2.6 specifications, available in 2.5-inch U.2, EDSFF E3.S/E1.S, and M.2 form factors. It offers capacity options ranging from 500GB to 64TB, with sequential read/write speeds reaching up to 14,800 MB/s and 12,000 MB/s respectively, and random read/write performance up to 3,400K IOPS / 740K IOPS. The drive also features enhanced FDP (Flexible Data Placement) and security features support.