SICC (02631) rose more than 6% in afternoon trading, with a gain of 5.09% at the time of writing, reaching HK$61.9 and a turnover of HK$215 million. The company recently announced that it has established business collaborations with over half of the world's top 10 power semiconductor manufacturers. These clients primarily use SICC's high-quality silicon carbide (SiC) substrates to produce power devices and RF devices, which are ultimately applied in electric vehicles, AI data centers, and photovoltaic systems. According to Huaxi Securities, addressing thermal dissipation in CoWoS packaging has become a critical challenge for AI computing chip development. If CoWoS replaces interposers with SiC in the future, and assuming a 35% compound annual growth rate post-2028 with 70% SiC adoption, demand could exceed 2.3 million 12-inch SiC substrates by 2030—equivalent to approximately 9.2 million 6-inch substrates—far surpassing current production capacity.