The Roundhill Memory ETF (DRAM) surged 5.64% during the trading session.

The rally was fueled by a major technological breakthrough in the memory sector, as Samsung Electronics announced it has successfully developed and tested the world's first 900-layer V-NAND prototype system. This advancement is expected to reshape flash memory competition and reinforce Samsung's leadership, boosting sentiment across memory chip stocks held by the ETF.

Additionally, the DRAM ETF itself has attracted significant investor interest, with assets surpassing $10 billion and the fund gaining 90% since its launch in early April, reflecting strong confidence in the memory sector's growth driven by AI demand.