Roundhill Memory ETF (DRAM) experienced a significant 5.01% decline during night session trading, reflecting investor concerns about potential disruption in the memory chip sector.

The sharp drop follows news that Chinese researchers at Fudan University have achieved a breakthrough in room-temperature single-electron non-volatile quantum memory technology. This advancement, published in the journal Science, represents a potential leapfrog technology that could drastically reduce memory power consumption by orders of magnitude compared to current Dynamic Random-Access Memory (DRAM) technology.

Professor Zhou Peng's team plans to establish a startup company in the second half of this year, with initial goals to complete chip verification using modified existing semiconductor production lines. This development raises concerns about the future competitiveness of traditional memory technologies that the Roundhill Memory ETF tracks, as the new single-electron storage approach could fundamentally address energy consumption challenges in computing centers.