IQE, X-FAB to Collaborate on Power Device Platform Solution

Dow Jones

2025/04/10

By Nina Kienle

IQE said it signed a joint development agreement with X-FAB to create a European-based gallium nitride power device platform solution.

The U.K. semiconductor company on Thursday said that the agreement has an initial two-year scope and is to develop a 650 volt gallium nitride device.

Gallium nitride is a material that can be used in the production of semiconductor power devices.

IQE will leverage its gallium nitride design and process expertise with X-FAB's technology development and device fabrication capabilities, it said.

The technology will also serve as a foundation for future product development to address the growing market demand for power electronics, it said.

"This collaboration provides a compelling alternative to existing supply chain models and strengthens Europe's position in next-generation power semiconductor technology," X-FAB's Chief Technology Officer Joerg Doblaski said.

Financial details weren't provided.

Write to Nina Kienle at nina.kienle@wsj.com

(END) Dow Jones Newswires

April 10, 2025 02:48 ET (06:48 GMT)

Copyright (c) 2025 Dow Jones & Company, Inc.

应版权方要求，你需要登录查看该内容

登录 / 注册

免责声明：投资有风险，本文并非投资建议，以上内容不应被视为任何金融产品的购买或出售要约、建议或邀请，作者或其他用户的任何相关讨论、评论或帖子也不应被视为此类内容。本文仅供一般参考，不考虑您的个人投资目标、财务状况或需求。TTM对信息的准确性和完整性不承担任何责任或保证，投资者应自行研究并在投资前寻求专业建议。

热议股票

1
2
3
4
5
6
7
8
9
10

{"basename":"/hans","ssrTDKData":{"titleTemplate":"%s - 老虎证券","title":"老虎证券全球投资理财平台| 一站式投资美股新股港股A股","description":"老虎证券助您一站式投资美股，新股，港股，A股等全球金融理财产品。新加坡华人最信赖的在线投资平台，现在加入即享低费用，24/5 无时差炒美股投资理财！","keywords":"老虎证券,老虎证券开户,老虎券商,老虎证券官网,老虎证券app,tigertrade老虎证券,股票,炒股,新加坡股票交易平台,投资,投资理财","social":{"ogDescription":"老虎证券助您一站式投资美股，新股，港股，A股等全球金融理财产品。新加坡华人最信赖的在线投资平台，现在加入即享低费用，24/5 无时差炒美股投资理财！","ogImage":"https://c1.itigergrowtha.com/portal5/static/media/og-logo.be62fbe1.png","ogUrl":"https://www.itiger.com/hans/news/2526358870"},"companyName":"老虎证券"},"pageData":{"isMobile":false,"isTiger":false,"isTTM":true,"region":"SGP","license":"TBSG","edition":"fundamental"},"isCrawlerRequest":true,"__swrFallback__":{"@#url:\"https://stock-news.skytigris.cn/v3/news\",params:#id:\"2526358870\",edition:\"fundamental\",auth_exemption:1,,,undefined,":{"share":"https://ttm.financial/m/news/2526358870?lang=zh_CN&edition=fundamental","thumbnail":"","is_english":true,"pubTime":"2025-04-10 14:48","share_image_url":"https://static.laohu8.com/e9f99090a1c2ed51c021029395664489","id":"2526358870","market":"fut","top_or_hot":-1,"title":"IQE, X-FAB to Collaborate on Power Device Platform Solution","media":"Dow Jones","content":"<font class=\"NormalMinus1\" face=\"Arial\">\n<pre>\n \n</pre>\n<p>\n  By Nina Kienle \n</p>\n<pre>\n \n</pre>\n<p>\n  <a href=\"https://laohu8.com/S/IQE.UK\">IQE</a> said it signed a joint development agreement with X-FAB to create a European-based gallium nitride power device platform solution. \n</p>\n<p>\n  The U.K. semiconductor company on Thursday said that the agreement has an initial two-year scope and is to develop a 650 volt gallium nitride device. \n</p>\n<p>\n  Gallium nitride is a material that can be used in the production of semiconductor power devices. \n</p>\n<p>\n  IQE will leverage its gallium nitride design and process expertise with X-FAB's technology development and device fabrication capabilities, it said. \n</p>\n<p>\n  The technology will also serve as a foundation for future product development to address the growing market demand for power electronics, it said. \n</p>\n<p>\n  \"This collaboration provides a compelling alternative to existing supply chain models and strengthens Europe's position in next-generation power semiconductor technology,\" X-FAB's Chief Technology Officer Joerg Doblaski said. \n</p>\n<p>\n  Financial details weren't provided. \n</p>\n<pre>\n \n</pre>\n<p>\n  Write to Nina Kienle at nina.kienle@wsj.com \n</p>\n<pre>\n \n</pre>\n<p>\n  (END) Dow Jones Newswires\n</p>\n<p>\n  April 10, 2025 02:48 ET (06:48 GMT)\n</p>\n<p>\n  Copyright (c) 2025 Dow Jones &amp; Company, Inc.\n</p>\n</font>","source":null,"html":"<!DOCTYPE html>\n<html>\n<head>\n<meta http-equiv=\"Content-Type\" content=\"text/html; charset=utf-8\" />\n<meta name=\"viewport\" content=\"width=device-width,initial-scale=1.0,minimum-scale=1.0,maximum-scale=1.0,user-scalable=no\"/>\n<meta name=\"format-detection\" content=\"telephone=no,email=no,address=no\" />\n<title>IQE, X-FAB to Collaborate on Power Device Platform Solution</title>\n<style type=\"text/css\">\na,abbr,acronym,address,applet,article,aside,audio,b,big,blockquote,body,canvas,caption,center,cite,code,dd,del,details,dfn,div,dl,dt,\nem,embed,fieldset,figcaption,figure,footer,form,h1,h2,h3,h4,h5,h6,header,hgroup,html,i,iframe,img,ins,kbd,label,legend,li,mark,menu,nav,\nobject,ol,output,p,pre,q,ruby,s,samp,section,small,span,strike,strong,sub,summary,sup,table,tbody,td,tfoot,th,thead,time,tr,tt,u,ul,var,video{ font:inherit;margin:0;padding:0;vertical-align:baseline;border:0 }\nbody{ font-size:16px; line-height:1.5; color:#999; background:transparent; }\n.wrapper{ overflow:hidden;word-break:break-all;padding:10px; }\nh1,h2{ font-weight:normal; line-height:1.35; margin-bottom:.6em; }\nh3,h4,h5,h6{ line-height:1.35; margin-bottom:1em; }\nh1{ font-size:24px; }\nh2{ font-size:20px; }\nh3{ font-size:18px; }\nh4{ font-size:16px; }\nh5{ font-size:14px; }\nh6{ font-size:12px; }\np,ul,ol,blockquote,dl,table{ margin:1.2em 0; }\nul,ol{ margin-left:2em; }\nul{ list-style:disc; }\nol{ list-style:decimal; }\nli,li p{ margin:10px 0;}\nimg{ max-width:100%;display:block;margin:0 auto 1em; }\nblockquote{ color:#B5B2B1; border-left:3px solid #aaa; padding:1em; }\nstrong,b{font-weight:bold;}\nem,i{font-style:italic;}\ntable{ width:100%;border-collapse:collapse;border-spacing:1px;margin:1em 0;font-size:.9em; }\nth,td{ padding:5px;text-align:left;border:1px solid #aaa; }\nth{ font-weight:bold;background:#5d5d5d; }\n.symbol-link{font-weight:bold;}\n/* header{ border-bottom:1px solid #494756; } */\n.title{ margin:0 0 8px;line-height:1.3;color:#ddd; }\n.meta {color:#5e5c6d;font-size:13px;margin:0 0 .5em; }\na{text-decoration:none; color:#2a4b87;}\n.meta .head { display: inline-block; overflow: hidden}\n.head .h-thumb { width: 30px; height: 30px; margin: 0; padding: 0; border-radius: 50%; float: left;}\n.head .h-content { margin: 0; padding: 0 0 0 9px; float: left;}\n.head .h-name {font-size: 13px; color: #eee; margin: 0;}\n.head .h-time {font-size: 11px; color: #7E829C; margin: 0;line-height: 11px;}\n.small {font-size: 12.5px; display: inline-block; transform: scale(0.9); -webkit-transform: scale(0.9); transform-origin: left; -webkit-transform-origin: left;}\n.smaller {font-size: 12.5px; display: inline-block; transform: scale(0.8); -webkit-transform: scale(0.8); transform-origin: left; -webkit-transform-origin: left;}\n.bt-text {font-size: 12px;margin: 1.5em 0 0 0}\n.bt-text p {margin: 0}\n</style>\n</head>\n<body>\n<div class=\"wrapper\">\n<header>\n<h2 class=\"title\">\nIQE, X-FAB to Collaborate on Power Device Platform Solution\n</h2>\n\n<h4 class=\"meta\">\n\n\n<div class=\"head\" \">\n\n\n<div class=\"h-thumb\" style=\"background-image:url(https://static.tigerbbs.com/150f88aa4d182df19190059f4a365e99);background-size:cover;\"></div>\n\n<div class=\"h-content\">\n<p class=\"h-name\">Dow Jones </p>\n<p class=\"h-time\">2025-04-10 14:48</p>\n</div>\n\n</div>\n\n\n</h4>\n\n</header>\n<article>\n<font class=\"NormalMinus1\" face=\"Arial\">\n<pre>\n \n</pre>\n<p>\n  By Nina Kienle \n</p>\n<pre>\n \n</pre>\n<p>\n  <a href=\"https://laohu8.com/S/IQE.UK\">IQE</a> said it signed a joint development agreement with X-FAB to create a European-based gallium nitride power device platform solution. \n</p>\n<p>\n  The U.K. semiconductor company on Thursday said that the agreement has an initial two-year scope and is to develop a 650 volt gallium nitride device. \n</p>\n<p>\n  Gallium nitride is a material that can be used in the production of semiconductor power devices. \n</p>\n<p>\n  IQE will leverage its gallium nitride design and process expertise with X-FAB's technology development and device fabrication capabilities, it said. \n</p>\n<p>\n  The technology will also serve as a foundation for future product development to address the growing market demand for power electronics, it said. \n</p>\n<p>\n  \"This collaboration provides a compelling alternative to existing supply chain models and strengthens Europe's position in next-generation power semiconductor technology,\" X-FAB's Chief Technology Officer Joerg Doblaski said. \n</p>\n<p>\n  Financial details weren't provided. \n</p>\n<pre>\n \n</pre>\n<p>\n  Write to Nina Kienle at nina.kienle@wsj.com \n</p>\n<pre>\n \n</pre>\n<p>\n  (END) Dow Jones Newswires\n</p>\n<p>\n  April 10, 2025 02:48 ET (06:48 GMT)\n</p>\n<p>\n  Copyright (c) 2025 Dow Jones &amp; Company, Inc.\n</p>\n</font>\n\n</article>\n</div>\n</body>\n</html>\n","isBrief":false,"type":0,"news_type":1,"symbol":"PW","symbol_name":"Power REIT","start_time":0,"source_url":"https://dowjonesnews.com/newdjn/logon.aspx?AL=N","article_id":"2526358870","we_media_id":"106","thumbnails":[],"rights":null,"url":"https://stock-news.laohu8.com/highlight/detail?id=2526358870","pubTimestamp":1744267680,"columns":[],"sourceInfo":null,"weMediaInfo":{"media_name":"Dow Jones","introduction":"Dow Jones publishes the world’s most trusted business news and financial information in a variety of media.","home_visible":0,"id":"106","head_image":"https://static.tigerbbs.com/150f88aa4d182df19190059f4a365e99"},"summary":"IQE said it signed a joint development agreement with X-FAB to create a European-based gallium nitride power device platform solution.The U.K. semiconductor company on Thursday said that the agreement has an initial two-year scope and is to develop a 650 volt gallium nitride device.Gallium nitride is a material that can be used in the production of semiconductor power devices.IQE will leverage its gallium nitride design and process expertise with X-FAB's technology development and device fabrication capabilities, it said.\"This collaboration provides a compelling alternative to existing supply chain models and strengthens Europe's position in next-generation power semiconductor technology,\" X-FAB's Chief Technology Officer Joerg Doblaski said.","collect":0,"end_time":0,"defaultTopTitle":"","property":[],"viewcount":null,"language":"en","relate_stocks":{"PW":"Power REIT","FAB":"First Trust Multi Cap Value Alph","BK4234":"特殊用途房地产信托","BK4084":"特种房地产投资信托"},"translate_title":"IQE与X-FAB合作开发功率器件平台解决方案","themeId":null,"isJumpTheme":false,"ttsUrl":null,"symbols_score_info":{"FAB":1,"PW":1},"content_text":"By Nina Kienle \n\n\n \n\n\nIQE said it signed a joint development agreement with X-FAB to create a European-based gallium nitride power device platform solution. \n\n\n  The U.K. semiconductor company on Thursday said that the agreement has an initial two-year scope and is to develop a 650 volt gallium nitride device. \n\n\n  Gallium nitride is a material that can be used in the production of semiconductor power devices. \n\n\n  IQE will leverage its gallium nitride design and process expertise with X-FAB's technology development and device fabrication capabilities, it said. \n\n\n  The technology will also serve as a foundation for future product development to address the growing market demand for power electronics, it said. \n\n\n  \"This collaboration provides a compelling alternative to existing supply chain models and strengthens Europe's position in next-generation power semiconductor technology,\" X-FAB's Chief Technology Officer Joerg Doblaski said. \n\n\n  Financial details weren't provided. \n\n\n \n\n\n  Write to Nina Kienle at nina.kienle@wsj.com \n\n\n \n\n\n  (END) Dow Jones Newswires\n\n\n  April 10, 2025 02:48 ET (06:48 GMT)\n\n\n  Copyright (c) 2025 Dow Jones & Company, Inc.","kind":"highlight","is_publish_news":true,"is_publish_highlight":false,"is_publish_live":false,"is_publish_wemedia":null,"editions":null,"column":"","sentiment":"1","news_tag":"corporation","news_rank":0,"symbols":[],"gpt_button":0,"need_auth":true,"code":"91000000","status":"200"}}}