SK Hynix (KRX:000660) outlined its 30-year DRAM innovation roadmap at the IEEE VLSI Symposium 2025 in Kyoto, the South Korean chipmaker said in a Monday press release.

Chief Technology Officer Cha Seon Yong introduced the 4F² Vertical Gate platform and 3D DRAM as key bases for next-generation memory, enabling higher integration, faster speeds, and lower power consumption, the release said.

Cha emphasized the continuous innovation in structure, materials, and components, which will help sustain long-term competitiveness in the industry, it said.

Shares of SK Hynix jumped nearly 4% in recent trade on Wednesday.