Silvaco Group Inc., a leader in semiconductor design and digital twin modeling, has announced a strategic R&D collaboration with the Fraunhofer Institute for Silicon Technology (ISIT). This partnership aims to accelerate the development of next-generation Gallium Nitride (GaN) devices by leveraging Silvaco's Power Devices Solution to perform Design Technology Co-Optimization (DTCO). This collaboration is aligned with the EU Chips Act initiative and Fraunhofer ISIT's efforts in the APECS pilot line. The partnership will not only enhance the development of high voltage GaN devices but also advance Silvaco's TCAD tools. Additionally, Fraunhofer ISIT plans to utilize Silvaco's Victory TCAD™ platform to train future semiconductor device engineers, ensuring continued innovation in the field.