英特尔代工展示新一代片上去耦电容器技术

天极网

12/16

【天极网IT新闻频道】在2025年IEEE国际电子器件大会(IEDM 2025)上，英特尔代工展示了针对AI时代系统级芯片设计的关键技术突破——下一代嵌入式去耦电容器，这一创新有望解决晶体管持续微缩过程中面临的供电瓶颈，为AI和高性能芯片提供了更稳定、更高效的电源解决方案。电容材料创新英特尔代工的研究人员展示了三种新型金属-绝缘体-金属(MIM)电容器材料，用于深沟槽结构： (1)铁电铪...

网页链接

免责声明：投资有风险，本文并非投资建议，以上内容不应被视为任何金融产品的购买或出售要约、建议或邀请，作者或其他用户的任何相关讨论、评论或帖子也不应被视为此类内容。本文仅供一般参考，不考虑您的个人投资目标、财务状况或需求。TTM对信息的准确性和完整性不承担任何责任或保证，投资者应自行研究并在投资前寻求专业建议。

热议股票

{"basename":"/hans","ssrTDKData":{"titleTemplate":"%s - 老虎证券","title":"老虎证券全球投资理财平台| 一站式投资美股新股港股A股","description":"老虎证券助您一站式投资美股，新股，港股，A股等全球金融理财产品。新加坡华人最信赖的在线投资平台，现在加入即享低费用，24/5 无时差炒美股投资理财！","keywords":"老虎证券,老虎证券开户,老虎券商,老虎证券官网,老虎证券app,tigertrade老虎证券,股票,炒股,新加坡股票交易平台,投资,投资理财","social":{"ogDescription":"老虎证券助您一站式投资美股，新股，港股，A股等全球金融理财产品。新加坡华人最信赖的在线投资平台，现在加入即享低费用，24/5 无时差炒美股投资理财！","ogImage":"https://c1.itigergrowtha.com/portal5/static/media/og-logo.be62fbe1.png","ogUrl":"https://www.itiger.com/hans/news/2591720677"},"companyName":"老虎证券"},"pageData":{"isMobile":false,"isTiger":false,"isTTM":true,"region":"SGP","license":"TBSG","edition":"fundamental"},"isCrawlerRequest":true,"__swrFallback__":{"@#url:\"https://stock-news.skytigris.cn/v3/news\",params:#id:\"2591720677\",edition:\"fundamental\",auth_exemption:1,,,undefined,":{"share":"https://ttm.financial/m/news/2591720677?lang=zh_CN&edition=fundamental","thumbnail":"","is_english":false,"pubTime":"2025-12-16 11:54","share_image_url":"https://static.laohu8.com/9a95c1376e76363c1401fee7d3717173","id":"2591720677","market":"us","top_or_hot":-1,"title":"英特尔代工展示新一代片上去耦电容器技术","media":"天极网","content":"<div>\n<p>【天极网IT新闻频道】在2025年IEEE国际电子器件大会(IEDM 2025)上，英特尔代工展示了针对AI时代系统级芯片设计的关键技术突破——下一代嵌入式去耦电容器，这一创新有望解决晶体管持续微缩过程中面临的供电瓶颈，为AI和高性能芯片提供了更稳定、更高效的电源解决方案。  电容材料创新  英特尔代工的研究人员展示了三种新型金属-绝缘体-金属(MIM)电容器材料，用于深沟槽结构：  (1)铁电铪...</p>\n\n<a href=\"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN20251216120501a6a7c843&s=b\">网页链接</a>\n\n</div>\n","source":"tencent","html":"<!DOCTYPE html>\n<html>\n<head>\n<meta http-equiv=\"Content-Type\" content=\"text/html; charset=utf-8\" />\n<meta name=\"viewport\" content=\"width=device-width,initial-scale=1.0,minimum-scale=1.0,maximum-scale=1.0,user-scalable=no\"/>\n<meta name=\"format-detection\" content=\"telephone=no,email=no,address=no\" />\n<title>英特尔代工展示新一代片上去耦电容器技术</title>\n<style type=\"text/css\">\na,abbr,acronym,address,applet,article,aside,audio,b,big,blockquote,body,canvas,caption,center,cite,code,dd,del,details,dfn,div,dl,dt,\nem,embed,fieldset,figcaption,figure,footer,form,h1,h2,h3,h4,h5,h6,header,hgroup,html,i,iframe,img,ins,kbd,label,legend,li,mark,menu,nav,\nobject,ol,output,p,pre,q,ruby,s,samp,section,small,span,strike,strong,sub,summary,sup,table,tbody,td,tfoot,th,thead,time,tr,tt,u,ul,var,video{ font:inherit;margin:0;padding:0;vertical-align:baseline;border:0 }\nbody{ font-size:16px; line-height:1.5; color:#999; background:transparent; }\n.wrapper{ overflow:hidden;word-break:break-all;padding:10px; }\nh1,h2{ font-weight:normal; line-height:1.35; margin-bottom:.6em; }\nh3,h4,h5,h6{ line-height:1.35; margin-bottom:1em; }\nh1{ font-size:24px; }\nh2{ font-size:20px; }\nh3{ font-size:18px; }\nh4{ font-size:16px; }\nh5{ font-size:14px; }\nh6{ font-size:12px; }\np,ul,ol,blockquote,dl,table{ margin:1.2em 0; }\nul,ol{ margin-left:2em; }\nul{ list-style:disc; }\nol{ list-style:decimal; }\nli,li p{ margin:10px 0;}\nimg{ max-width:100%;display:block;margin:0 auto 1em; }\nblockquote{ color:#B5B2B1; border-left:3px solid #aaa; padding:1em; }\nstrong,b{font-weight:bold;}\nem,i{font-style:italic;}\ntable{ width:100%;border-collapse:collapse;border-spacing:1px;margin:1em 0;font-size:.9em; }\nth,td{ padding:5px;text-align:left;border:1px solid #aaa; }\nth{ font-weight:bold;background:#5d5d5d; }\n.symbol-link{font-weight:bold;}\n/* header{ border-bottom:1px solid #494756; } */\n.title{ margin:0 0 8px;line-height:1.3;color:#ddd; }\n.meta {color:#5e5c6d;font-size:13px;margin:0 0 .5em; }\na{text-decoration:none; color:#2a4b87;}\n.meta .head { display: inline-block; overflow: hidden}\n.head .h-thumb { width: 30px; height: 30px; margin: 0; padding: 0; border-radius: 50%; float: left;}\n.head .h-content { margin: 0; padding: 0 0 0 9px; float: left;}\n.head .h-name {font-size: 13px; color: #eee; margin: 0;}\n.head .h-time {font-size: 11px; color: #7E829C; margin: 0;line-height: 11px;}\n.small {font-size: 12.5px; display: inline-block; transform: scale(0.9); -webkit-transform: scale(0.9); transform-origin: left; -webkit-transform-origin: left;}\n.smaller {font-size: 12.5px; display: inline-block; transform: scale(0.8); -webkit-transform: scale(0.8); transform-origin: left; -webkit-transform-origin: left;}\n.bt-text {font-size: 12px;margin: 1.5em 0 0 0}\n.bt-text p {margin: 0}\n</style>\n</head>\n<body>\n<div class=\"wrapper\">\n<header>\n<h2 class=\"title\">\n英特尔代工展示新一代片上去耦电容器技术\n</h2>\n\n<h4 class=\"meta\">\n\n\n2025-12-16 11:54 北京时间&nbsp;&nbsp;&nbsp;<a href=http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN20251216120501a6a7c843&s=b><strong>天极网</strong></a>\n\n\n</h4>\n\n</header>\n<article>\n<div>\n<p>【天极网IT新闻频道】在2025年IEEE国际电子器件大会(IEDM 2025)上，英特尔代工展示了针对AI时代系统级芯片设计的关键技术突破——下一代嵌入式去耦电容器，这一创新有望解决晶体管持续微缩过程中面临的供电瓶颈，为AI和高性能芯片提供了更稳定、更高效的电源解决方案。  电容材料创新  英特尔代工的研究人员展示了三种新型金属-绝缘体-金属(MIM)电容器材料，用于深沟槽结构：  (1)铁电铪...</p>\n\n<a href=\"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN20251216120501a6a7c843&s=b\">网页链接</a>\n\n</div>\n\n\n</article>\n</div>\n</body>\n</html>\n","isBrief":false,"type":0,"news_type":1,"symbol":"LU0321505868.SGD","symbol_name":"Schroder ISF Global Dividend Maximiser A Dis SGD","start_time":0,"source_url":"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN20251216120501a6a7c843&s=b","article_id":"2591720677","we_media_id":null,"thumbnails":[],"rights":{"source":"tencent","url":"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN20251216120501a6a7c843&s=b","rn_cache_url":null,"customStyle":"body{padding-top:10px;}#news_title{font-weight:bold;#titleStyle#;}#news_description span{font-size:12px;#descriptionStyle#;}.footer-note{#statement#}","selectors":".mod-LoadTzbdNews, body","filters":".relate-stock, .hot-list, .recom-box, .wx-sou","directOrigin":true},"url":"https://stock-news.laohu8.com/highlight/detail?id=2591720677","pubTimestamp":1765857244,"columns":[],"sourceInfo":{"source_id":"tencent","name":"腾讯"},"weMediaInfo":null,"summary":"在2025年IEEE国际电子器件大会上，英特尔代工展示了针对AI时代系统级芯片设计的关键技术突破——下一代嵌入式去耦电容器，这一创新有望解决晶体管持续微缩过程中面临的供电瓶颈，为AI和高性能芯片提供了更稳定、更高效的电源解决方案。系统级优势这一技术突破将为AI芯片设计带来多重优势，包括电源完整性提升，有效抑制电源噪声和电压波动。英特尔代工将致力于持续创新，为AI时代的高性能计算芯片提供关键的电源管理解决方案。","collect":0,"end_time":0,"defaultTopTitle":"qq.com","property":[],"viewcount":null,"language":"zh","relate_stocks":{"LU0321505868.SGD":"Schroder ISF Global Dividend Maximiser A Dis SGD","BK4535":"淡马锡持仓","LU0321505439.SGD":"Schroder ISF Global Dividend Maximiser A Acc SGD","BK4515":"5G概念","BK4612":"AI芯片","BK4602":"量子计算概念","LU2089985449.USD":"MANULIFE GF GLOBAL SEMICONDUCTOR OPPORTUNITIES \"AA\" (USD) ACC","BK4588":"碎股","BK4550":"红杉资本持仓","BK4579":"人工智能","BK4605":"半导体精选","LU2931357623.SGD":"MANULIFE GF GLOBAL SEMICONDUCTOR OPPORTUNITIES \"AA\" (SGDHDG) ACC","LU0274383776.USD":"MANULIFE GF US SMALL CAP EQUITY \"AA\" (USD) INC","LU2148611432.USD":"AZ ALLOCATION BALANCED BRAVE \"AAZ\" (USDHDG) ACC","LU0081259029.USD":"UBS (LUX) EQUITY FUND - TECH OPPORTUNITY \"P\" (USD) ACC","BK4554":"元宇宙及AR概念","INTC":"英特尔","LU2543165471.USD":"E FUND (HK) GLOBAL QUALITY GROWTH \"A\" (USD) ACC","BK4512":"苹果概念","BK4527":"明星科技股","BK4543":"AI","BK4533":"AQR资本管理(全球第二大对冲基金)","BK4585":"ETF&股票定投概念","BK4141":"半导体产品","BK4534":"瑞士信贷持仓","BK4529":"IDC概念","BK4575":"芯片概念"},"translate_title":"Intel OEM demonstrates new generation of chip decoupling capacitor technology","themeId":null,"isJumpTheme":false,"ttsUrl":null,"symbols_score_info":{"INTC":1.5},"content_text":"【天极网IT新闻频道】在2025年IEEE国际电子器件大会(IEDM 2025)上，英特尔代工展示了针对AI时代系统级芯片设计的关键技术突破——下一代嵌入式去耦电容器，这一创新有望解决晶体管持续微缩过程中面临的供电瓶颈，为AI和高性能芯片提供了更稳定、更高效的电源解决方案。  电容材料创新  英特尔代工的研究人员展示了三种新型金属-绝缘体-金属(MIM)电容器材料，用于深沟槽结构：  (1)铁电铪锆氧化物(HfZrO)：利用铁电材料的自发极化特性，在纳米级尺度下实现高介电常数;  (2)二氧化钛(TiO₂)：具有优异的介电性能和热稳定性;  (3)钛酸锶(SrTiO₃)：钙钛矿结构材料，在深沟槽中展现出卓越的电容密度。  这些材料可通过原子层沉积(ALD)在深沟槽结构中实现均匀且可控的薄膜生长，从而显著改善界面质量，并提升器件可靠性。  突破性性能指标  该技术实现了跨代际的飞跃，具体表现在：  (2)电容密度：达到60-98 fF/μm2，相比当前先进技术实现显著提升;  (2)漏电性能：漏电水平比行业目标低1000倍，大幅降低静态功耗;  (3)可靠性：不影响电容漂移和击穿电压等指标。  系统级优势  这一技术突破将为AI芯片设计带来多重优势，包括电源完整性提升，有效抑制电源噪声和电压波动。在热管理协同优化方面，实现电热协同优化，为高功率AI芯片提供更稳定的工作环境。它还有助于在有限芯片面积内实现更高的电容密度，为功能模块集成释放更多空间，实现芯片面积优化。  在下一代先进CMOS工艺中，一系列稳定、低漏电的MIM电容密度增强技术具有相当的应用潜力。英特尔代工将致力于持续创新，为AI时代的高性能计算芯片提供关键的电源管理解决方案。","kind":"news","is_publish_news":true,"is_publish_highlight":false,"is_publish_live":false,"is_publish_wemedia":null,"editions":null,"column":"","sentiment":"0","news_tag":"productRelease","news_rank":0,"symbols":[],"gpt_button":0,"need_auth":false,"code":"91000000","status":"200"}}}