Atomera Inc. has provided an update on its gallium nitride (GaN) development efforts. Earlier in the year, Atomera demonstrated improvements in GaN growth on silicon wafers in collaboration with Texas State University, with MST wafers showing significantly lower defect density compared to control wafers. The company has since partnered with Sandia National Labs to build electrical devices using these improved wafers. Early results indicate reductions in leakage or higher breakdown voltage on wafers utilizing MST, which is attributed to improved GaN growth quality. Additional electrical measurements are underway, with further results expected early in the new year. Atomera has also submitted a concept paper with Sandia and other partners to the Department of Energy for funding related to improved materials and wide bandgap manufacturing, with a decision anticipated by mid-2026.