SICC (02631) rose more than 7%, reaching HK$59.55 by the time of writing, with a trading volume of HK$188 million. As a leading player in the silicon carbide (SiC) semiconductor materials industry, SICC has achieved a technological breakthrough in full-series 12-inch SiC substrates, ushering the industry into the 12-inch era.

According to research reports, SiC, as a third-generation wide-bandgap semiconductor, is gaining widespread adoption in new energy, AI, communications, and AR industries due to its superior properties such as high breakdown electric field, wide bandgap, thermal conductivity, and electron saturation drift velocity.

Analysts project that surging demand will drive rapid industry expansion, with SiC substrate supply and demand expected to reach a tight balance by 2027, potentially leading to supply shortages. By 2030, global demand for substrates is estimated at 16.76 million units, leaving a gap of approximately 12 million units compared to 2025 supply levels.

Key growth drivers include AI interposers, new energy vehicles, and AR glasses, accounting for 37%, 26%, and 23% of demand by 2030, respectively. If SiC achieves industrialization in AI chip packaging—spanning substrate layers, interposers, and heat sinks—global demand could reach around 30 million units by 2030.