Shares of SICC (HKEX: 02631) rose close to 7% during the morning session. At the time of writing, the stock is up 3.27% to HK$104.1, with a turnover of HK$329 million.

The upward movement follows industry developments where major overseas silicon carbide (SiC) players have commenced a second round of price increases. The surge in power consumption from AI chips, such as those from Nvidia, is pushing traditional silicon-based power architectures to their physical limits.

The industry is accelerating its transition towards 800V high-voltage direct current (HVDC) architectures, making silicon carbide an essential material for AI server solid-state transformers and power management. Major firms including Infineon and STMicroelectronics have indicated that deployments in AI data centers are causing severe supply shortages for multiple power devices.

Public information shows that SICC holds a leading global share in the 8-inch silicon carbide substrate market. The company has completed the development, sampling, and small-batch trial supply of its 12-inch products.

It is reported that SICC's 12-inch SiC substrates have entered the supply chain verification stage with TSMC. They are undergoing sampling tests as a potential next-generation CoWoS interposer solution, intended to replace silicon interposers and address the thermal bottleneck in high-performance GPUs.