A significant advancement in next-generation semiconductor technology has been achieved by Taiwan Semiconductor Manufacturing in collaboration with National Yang Ming Chiao Tung University. The team has successfully developed a high-performance single-layer molybdenum disulfide (MoS2) top-gated transistor, which could help overcome the limitations of Moore's Law and open new possibilities for the "post-silicon" era.

Industry experts note that as semiconductor manufacturing approaches nodes below 1 nanometer, finding new materials has become essential to sustain Moore's Law. Among these, MoS2, a promising two-dimensional semiconductor material, is expected to be formally introduced at the 0.7 nanometer (A7 process) and CFET (complementary field-effect transistor) stages. Major semiconductor equipment manufacturers, including Applied Materials, ASML, AIXTRON, ASM International, and Lam Research, are actively investing in developing the necessary equipment and technologies for this new material.

The demand for faster computing and lower power consumption in devices like smartphones, computers, and future AI-powered systems continues to drive semiconductor innovation. However, traditional silicon-based technology is approaching its physical limits. Two-dimensional semiconductors, which are only a few atoms thick, are seen as a key breakthrough for extending Moore's Law, enabling further chip miniaturization and performance enhancement.