On August 22, SICC (02631) reached a basic agreement with Toshiba Electronic Components & Storage Corporation regarding SiC power semiconductor substrates developed and manufactured by SICC. The two parties will engage in the following cooperation: technical collaboration for improving SiC power semiconductor characteristics and quality enhancement, as well as commercial cooperation to expand high-quality stable substrate supply utilizing collaboration results.

Power semiconductors, which handle power supply and control functions, are indispensable semiconductor components for achieving energy efficiency and carbon neutrality in all electrical equipment. Against the backdrop of increasing demand for improved power usage efficiency in equipment, market demand is expected to continue expanding in the future. Among these, power semiconductors using SiC substrates are applied in electric vehicles, renewable energy systems, and other scenarios requiring high-efficiency power conversion. Beyond power efficiency, reliability and quality stability have become important considerations.

Based on this, Toshiba Electronic Components, leveraging its track record in developing, manufacturing, and supplying SiC power semiconductors for railway applications, is accelerating the development of SiC devices for server power supplies, automotive applications, and other uses. The company will focus on further reducing SiC power semiconductor losses and developing high-reliability, high-efficiency products for high-efficiency power conversion applications. For this purpose, in addition to Toshiba Electronic Components' independent research and development, close collaboration with SiC substrate technology improvement is also crucial.

This specific cooperation with SICC, which holds a global leadership position in SiC substrate development and mass production technology, is expected to provide optimal solutions for various application scenarios and accelerate business expansion.

Since its establishment in 2010, SICC has consistently focused on the development and production of single crystal SiC substrates. The company has made quality and technology development its core business philosophy, ranking among the global top five in the number of patents related to silicon carbide substrates. Taking advantage of becoming China's first listed SiC concept company in 2022, the company achieved global business expansion and vertical growth in market share. In 2024, SICC launched the world's first 12-inch SiC substrate, and in 2025, it plans to achieve a complete 12-inch substrate portfolio covering n-type, semi-insulating, and p-type products. The company will continue to advance through excellent quality and cutting-edge technology.

Through this cooperation with Toshiba Electronic Components, SICC will transform the demand for SiC power semiconductor products and Toshiba's expectations for core SiC substrate technology applications into improvements in substrate quality and reliability, supporting the development of the SiC power semiconductor market.