On the morning of September 21, CXMT (ChangXin Memory Technologies) officially announced that its fifth-generation DRAM technology platform, referred to as the "G5 platform," has entered mass production. Alongside this milestone, the company also showcased a new high-capacity LPDDR5X product built on this advanced platform.

The G5 platform's process technology is said to rival the most advanced mass-production nodes currently used by industry leaders, representing a pivotal achievement in CXMT's roadmap for high-end memory solutions. Central to this breakthrough is an innovative quadruple patterning technique that shrinks the active area half-pitch of the memory array to just 11.95 nanometers, bringing it close to the specifications of the world's premier DRAM manufacturing processes.

Through transformative changes to the manufacturing workflow and the adoption of new materials, CXMT has achieved a storage capacitor with an impressive aspect ratio of 45:1. Furthermore, the company developed a high-dielectric-constant metal gate (HKMG) process tailored specifically for DRAM fabrication, which reduces the height of the G5 platform's core functional region to a compact 6762 nanometers.

The miniaturization advancements of the G5 process have led to a substantial leap in storage density. Specifically, the number of raw dies produced per silicon wafer has increased by at least 50% compared to the fourth-generation platform. This progress delivers notable benefits in both product energy efficiency and cost control, solidifying CXMT's competitive edge in the memory market.