Hong Kong Stock Alert | SICC Surges Over 8% as Silicon Carbide Emerges as New Chip Cooling Solution, Company is Leading SiC Substrate Provider

Stock News
09/19

SICC (02631) surged over 8%, and as of press time, the stock was up 8.05% to HK$65.8 with trading volume of HK$115 million.

On the news front, Huawei recently disclosed two patents related to silicon carbide heat dissipation, including "Thermally Conductive Composition and Its Preparation Method and Application" and "A Thermally Conductive Wave-Absorbing Composition and Its Application." Both patents utilize silicon carbide as filler to enhance the thermal conductivity of electronic devices. The former patent covers applications in heat dissipation and packaging of electronic components (substrates, heat spreaders), while the latter applies to electronic components and circuit boards.

Previously, reports indicated that NVIDIA plans to replace silicon with silicon carbide as the interposer material in CoWoS advanced packaging for its next-generation Rubin processors to improve thermal performance, with large-scale adoption expected to begin in 2027.

SICC has previously stated that the company continues to invest in forward-looking technological innovations. Beyond supplying silicon carbide substrate materials for power devices and RF devices, the company has extensively deployed SiC products and technologies in emerging fields such as optical waveguides, TC-SAW filters, and thermal management components.

Securities analysts have previously noted that silicon carbide's excellent thermal conductivity properties position it for potential applications in interposer layers and thermal substrates, with related manufacturers expected to benefit. Key targets include leading SiC substrate companies such as SICC.

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