IQE, X-FAB to Collaborate on Power Device Platform Solution

Dow Jones

2025/04/10

By Nina Kienle

IQE said it signed a joint development agreement with X-FAB to create a European-based gallium nitride power device platform solution.

The U.K. semiconductor company on Thursday said that the agreement has an initial two-year scope and is to develop a 650 volt gallium nitride device.

Gallium nitride is a material that can be used in the production of semiconductor power devices.

IQE will leverage its gallium nitride design and process expertise with X-FAB's technology development and device fabrication capabilities, it said.

The technology will also serve as a foundation for future product development to address the growing market demand for power electronics, it said.

"This collaboration provides a compelling alternative to existing supply chain models and strengthens Europe's position in next-generation power semiconductor technology," X-FAB's Chief Technology Officer Joerg Doblaski said.

Financial details weren't provided.

Write to Nina Kienle at nina.kienle@wsj.com

(END) Dow Jones Newswires

April 10, 2025 02:48 ET (06:48 GMT)

Copyright (c) 2025 Dow Jones & Company, Inc.

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