Atomera Inc. Partners with Incize to Enhance GaN-on-Si Technology for Next-Gen RF and Power Devices

Reuters
2025/07/09
<a href="https://laohu8.com/S/ATOM">Atomera Inc</a>. Partners with Incize to Enhance GaN-on-Si Technology for Next-Gen RF and Power Devices

Atomera Inc., a leader in advanced semiconductor materials, has entered into a strategic collaboration with Incize, a Belgian company specializing in semiconductor characterization and modeling. This partnership aims to enhance Gallium Nitride on Silicon (GaN-on-Si) technologies, targeting high-frequency and high-power applications in markets such as wireless infrastructure, satellite communications, and advanced power electronics. The collaboration will focus on integrating Atomera's Mears Silicon Technology™ (MST®) with Incize's measurement techniques to improve GaN-on-Si device performance, addressing challenges like interface quality, parasitic effects, noise, and RF power handling. This joint effort is expected to accelerate the development of next-generation RF and power devices.

Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Atomera Inc. published the original content used to generate this news brief via Business Wire (Ref. ID: 20250709351477) on July 09, 2025, and is solely responsible for the information contained therein.

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