Samsung Electronics (KRX:005930) has unveiled its next-generation 3D memory architectures with the first concept models of zHBM and zNAND-O, according to a company release on Wednesday.

ZHBM is a new architecture that vertically stacks HBM directly above AI accelerators instead of alongside them.

The electronics company expects the model to deliver higher bandwidth and better power efficiency, supporting ultra-fast data processing needed for large-scale AI tasks.

Meanwhile, zNAND-O is a high-performance NAND solution intended for edge AI environments anchoring real-time, data-intensive AI applications.

The company also launched V10 BV-NAND, an architecture featuring a new wafer bonding technology and exceeds 400 layers.

Shares of the company rose nearly 4% in recent trade.