中芯国际集成电路制造(北京)有限公司键合结构及其形成方法专利完成登记(半导体器件专利快讯)

DoNews
Sep 23

天眼查App显示,2025-09-23,“键合结构及其形成方法”(patentName)正式进入专利的公布阶段。申请人为中芯国际集成电路制造(北京)有限公司,中芯国际集成电路制造(上海)有限公司,该项半导体器件专利涉及集成电路制造中的键合结构制备技术场景。据专利信息显示,通过仅一次半曝光处理结合单张掩膜即可形成不同深度的开口结构,显著优化工艺流程;后续在第一开口和第二开口内形成互连结构,使得晶圆...

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