IT之家 10 月 22 日消息，中国台湾地区晶圆代工企业联华电子（IT之家注：即联电、UMC）今日宣布推出55nm BCD (Bipolar-CMOS-DMOS)工艺平台。
这一特色制程能在单一芯片上集成模拟、数字与电力元件，广泛应用于电源管理与混合信号集成电路，可提升移动设备、消费电子、汽车工业应用产品的能效表现，并提供更小芯片面积与卓越抗噪声表现。
联电的55nm BCD平台包含非外延 / 磊晶(Non-EPI)、外延 / 磊晶(EPI)、绝缘层上硅(SOI)三类制程，同时整合了UTM超厚金属层、eFLASH嵌入式闪存、RRAM忆阻器等技术。
联电技术研发副总经理徐世杰表示：
55纳米BCD平台的推出，象征联电在BCD技术布局上的重要里程碑，更进一步完善我们的特殊制程产品组合，强化在电源管理市场的竞争优势。
虽然55纳米BCD制程已在市场上量产多年，联电推出全新且全面的55纳米BCD解决方案，具备卓越的组件特性，协助客户打造创新电源解决方案，应用范围涵盖智能手机、穿戴式装置、车用、智能家庭与智慧工厂等领域。
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