ChainCatcher 消息，全球存储器持续严重缺货，AI 及云端应用推升 DRAM 与 NAND Flash 需求与价格。中国两大存储器厂长江存储与长鑫存储将打破各占半壁江山的格局。
长江存储跨入 LPDDR5 DRAM 将于 2026 年底试产，长鑫存储要从 DRAM 抢进 NAND Flash。业界推测两家最快 2028 年正面交锋。长江存储以 Xtacking 技术完成 294 层 3D NAND 开发，三星 2025 年与其达成专利许可协议，从第 10 代 V-NAND 起采用相关专利。
长江存储三期计划 2026 年底投产，初期约 2.5 万片 DRAM 产能，2027 年完成爬坡，瞄准 LPDDR5，并规划后续扩产及 HBM、3D DRAM。长鑫传出将在北京设置 NAND 研发生产线，估计最快 2028 至 2029 年量产。
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