与美光产生技术分歧,长鑫科技回应4F架构争议

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长鑫科技发布第三季度财报后,10月31日下午公布了一份投资者关系活动记录表,内容为业绩说明会的记录。长鑫科技在业绩说明会上回应了多个市场关切的问题。  此前长鑫科技宣布在4F²垂直沟道DRAM(动态随机存取存储器)架构上取得关键突破。该架构据称单位面积晶体管数量可比目前主流的6F²架构更多,且一定程度摆脱了工艺瓶颈。  此次长鑫科技透露,公司下一代也就是第六代工艺技术平台将基于4F²架构,该...

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