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达泰莱

3.03

-0.0100-0.33%

成交量：91.39万

成交额：276.90万

市值：365.11万

市盈率：-2.89

高：3.26

开：3.04

低：2.98

收：3.04

数据加载中...

总览公司新闻公告

【SK海力士韩国龙仁半导体集群一期晶圆厂动工预计2027年竣工】SK海力士2月25日发布消息称，韩国京畿道龙仁半导体集群内的SK海力士一期晶圆厂于昨日正式破土动工。SK海力士去年7月通过董事会决议，决定投资约9.4万亿韩元（约合66亿美元）建设龙仁半导体集群一期晶圆厂及相关办公设施。SK海力士计划在龙仁集群内分阶段建设四座晶圆厂，一期工厂预计2027年5月竣工。该工厂建成后将成为高带宽存储器（HBM）等新一代DRAM存储芯片生产基地。（科创板日报）

三星电子芯片业务部门主管上周曾前往英伟达携带新设计1b DRAM样品

【三星计划2028年推出“移动HBM”】三星电子半导体暨装置解决方案（DS）部门首席技术官宋在赫表示，搭载LPW DRAM内存的首款移动产品将在2028年上市。LPW DRAM通过堆叠LPDDR DRAM，大幅增加I/O接口，可减少耗电量并提高性能，采用垂直引线键合的新封装技术，被誉为“移动HBM”。其带宽可达200GB/s以上，较现有的LPDDR5x提升166%。

三星计划2028年推出“移动HBM”

TechInsights：2027年底DRAM预计将迈入个位数纳米技术节点

三星开发下一代DRAM以提高AI手机计算性能

【三星开发下一代DRAM以提高AI手机计算性能】三星电子正在开发下一代DRAM，以最大限度地提高AI智能手机和PC的计算性能。为确保移动HBM的性能和稳定性，三星电子此前宣布将利用柱柱连接堆叠的DRAM。

【扩大】中国扩大采用国产DRAM,全球DRAM价格连跌五月；AMD下一代Zen6架构产品计划引入三星4nm工艺

全球半导体论坛：中国扩大采用国产DRAM，全球DRAM价格连跌五月

国产内存加速追赶！长鑫15nm DRAM今年开发明年量产

快科技官方

誓要提升良率！曝三星重新调整1cnm DRAM设计：确保HBM4量产

快科技官方

中国存储芯片企业“滚雪球式”增长，“韩国该慌了”

DeepSeek R1模型引发投资者担忧，小摩：边缘AI需求上升或将刺激传统DRAM市场增长

三星DRAM，要被反超了？

半导体行业观察

SK海力士：传统DRAM市场今年将逐步调整。

SK海力士：HBM在四季度总体DRAM收入的占比超过40%。

因良率问题，三星第六代10nm级1c DRAM 延后半年

【新股IPO】据报长鑫存储考虑最早今年在香港上市

新股消息 | 传长鑫存储考虑最早今年赴港IPO

【中信证券：美国对华先进存储限制再加码，倒逼高端存储产业链国产加速】中信证券研报表示，1月15日晚间，BIS修订了《出口管理条例》，修改DRAM先进存储定义，工艺节点仍为18nm，存储单元面积及存储密度由24年12月的1ynm变为1xnm，同时增加TSV通孔数限制，对HBM和先进DRAM的限制再加码，倒逼产业链国产化加速。本次限制针对制造厂商及供应链，设计厂商业务正常开展，我们看好高端定制存储业务，持续推荐。同时我们认为，后续在本土高端封测厂商和设备厂商的配合下，国内DRAM原厂有望突破HBM，布局相关环节的厂商有望核心受益，看好高端存储产业链国产替代。

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16:56","pubTimestamp":1739350607,"startTime":"0","endTime":"0","summary":"长鑫存储此前主要生产采用17-18nm制程的DDR4、LPDDR4X等成熟产品，2024年11月，该公司首次发布了LPDDR5产品，并在2025年稍早成功实现了DDR5的商业化目标。研究机构TechInsights表示，长鑫存储在完成17nm制程技术开发后，紧接着完成了16nm制程技术的开发，因此首款商用DDR5产品采用了16nm制程技术。不过随着技术开发的成熟，预计长鑫存储利用现有设备也足以开发和量产下一代制程，毕竟美光的13nm DRAM制程技术也没有采用使用EUV。","market":"us","thumbnail":"https://k.sinaimg.cn/n/spider20250212/199/w600h399/20250212/e063-cd21a6570e263203bd9ef6df6c085c4a.jpg/w120h90l50t15fc.jpg","type":0,"news_type":0,"thumbnails":["https://k.sinaimg.cn/n/spider20250212/199/w600h399/20250212/e063-cd21a6570e263203bd9ef6df6c085c4a.jpg/w120h90l50t15fc.jpg"],"rights":{"source":"sina_tech","url":"https://tech.sina.cn/mobile/xp/2025-02-13/detail-inekfnmc2651430.d.html?vt=4","rn_cache_url":null,"customStyle":"body{padding-top:10px;}.art_tit_h1{#titleStyle#}a{#lv2TextColor#}.art_time, .art_cite{#sourceStyle#;} .art_cite{margin-left: 3px;}.weibo_user{#sourceStyle#; margin-bottom: 0; display: 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15:08","pubTimestamp":1739257688,"startTime":"0","endTime":"0","summary":"多名分析人士预测，长鑫存储预计将出现“滚雪球式”增长，迅速抢占全球市场份额，继而威胁其韩国竞争对手三星、SK海力士在该领域的“主导地位”。据介绍，长鑫存储成立于2016年，当时中国几乎还不具备自主生产DRAM芯片的能力。这导致旧款DRAM芯片价格下跌，侵蚀了三星和SK海力士的利润率，并迫使这两家韩国公司退出低端市场。长鑫存储2023年首次推出了其最新的LPDDR5 DRAM存储芯片。","market":"us","thumbnail":"","type":0,"news_type":0,"thumbnails":[],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":null,"theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"https://finance.jrj.com.cn/2025/02/11150848073697.shtml","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"1","news_top_title":null,"news_tag":"dataReport","news_rank":0,"length":0,"strategy_id":0,"source":"jinrongjie_stock","symbols":["DRAM","BK4168","HBM"],"gpt_icon":0},{"id":"2509916807","title":"DeepSeek R1模型引发投资者担忧，小摩：边缘AI需求上升或将刺激传统DRAM市场增长","url":"https://stock-news.laohu8.com/highlight/detail?id=2509916807","media":"智通财经","labels":[],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2509916807?lang=zh_cn&edition=fundamental","pubTime":"2025-02-07 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DRAM状况的消息。如果第六代10nm级1c DRAM制程从开发完成到量产的时间约为正常的6个月时间，则三星实际量产的时间预计将在2025年底。三星计划上半年全力投入六代10nm级1c DRAM制程，以尽快提高良率。韩国半导体产业人士指出，三星正在修改1c DRAM部分设计。","market":"us","thumbnail":null,"type":0,"news_type":0,"thumbnails":[],"rights":{"source":"tencent","url":"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN20250122104216abb3eb07&s=b","rn_cache_url":null,"customStyle":"body{padding-top:10px;}#news_title{font-weight:bold;#titleStyle#;}#news_description span{font-size:12px;#descriptionStyle#;}.footer-note{#statement#}","selectors":".mod-LoadTzbdNews, body","filters":".relate-stock, .hot-list, .recom-box, 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| 传长鑫存储考虑最早今年赴港IPO","url":"https://stock-news.laohu8.com/highlight/detail?id=2505493392","media":"智通财经","labels":[],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2505493392?lang=zh_cn&edition=fundamental","pubTime":"2025-01-21 17:32","pubTimestamp":1737451979,"startTime":"0","endTime":"0","summary":"智通财经APP获悉，据媒体消息，长鑫存储考虑最早今年在港股上市。此前，受市场环境动荡、半导体制造整体存在不确定性等因素的影响，长鑫存储选择推迟了IPO计划。资料显示，长鑫存储是一家一体化存储器制造公司，成立于2017年11月16日，总部位于合肥。截止目前，长鑫存储已完成多轮融资，其中包括兆易创新，长鑫集成、合肥产投等多名投资人共同参与。","market":"sh","thumbnail":null,"type":0,"news_type":0,"thumbnails":[],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":null,"theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"http://www.zhitongcaijing.com/content/detail/1241160.html","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"1","news_top_title":null,"news_tag":"","news_rank":0,"length":0,"strategy_id":0,"source":"stock_zhitongcaijing","symbols":["DRAM"],"gpt_icon":0},{"id":"2504478551","title":"【中信证券：美国对华先进存储限制再加码，倒逼高端存储产业链国产加速】中信证券研报表示，1月15日晚间，BIS修订了《出口管理条例》，修改DRAM先进存储定义，工艺节点仍为18nm，存储单元面积及存储密度由24年12月的1ynm变为1xnm，同时增加TSV通孔数限制，对HBM和先进DRAM的限制再加码，倒逼产业链国产化加速。本次限制针对制造厂商及供应链，设计厂商业务正常开展，我们看好高端定制存储业务，持续推荐。同时我们认为，后续在本土高端封测厂商和设备厂商的配合下，国内DRAM原厂有望突破HBM，布局相关环节的厂商有望核心受益，看好高端存储产业链国产替代。","url":"https://stock-news.laohu8.com/highlight/detail?id=2504478551","media":"金融界","labels":["policyRegulatory"],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2504478551?lang=zh_cn&edition=fundamental","pubTime":"2025-01-18 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