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達泰萊

3.03

-0.0100-0.33%

成交量：91.39萬

成交額：276.90萬

市值：365.11萬

市盈率：-2.89

高：3.26

開：3.04

低：2.98

收：3.04

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【SK海力士韓國龍仁半導體集羣一期晶圓廠動工預計2027年竣工】SK海力士2月25日發佈消息稱，韓國京畿道龍仁半導體集羣內的SK海力士一期晶圓廠於昨日正式破土動工。SK海力士去年7月通過董事會決議，決定投資約9.4萬億韓元（約合66億美元）建設龍仁半導體集羣一期晶圓廠及相關辦公設施。SK海力士計劃在龍仁集羣內分階段建設四座晶圓廠，一期工廠預計2027年5月竣工。該工廠建成後將成為高帶寬存儲器（HBM）等新一代DRAM存儲芯片生產基地。（科創板日報）

三星電子芯片業務部門主管上週曾前往英偉達攜帶新設計1b DRAM樣品

【三星計劃2028年推出“移動HBM”】三星電子半導體暨裝置解決方案（DS）部門首席技術官宋在赫表示，搭載LPW DRAM內存的首款移動產品將在2028年上市。LPW DRAM通過堆疊LPDDR DRAM，大幅增加I/O接口，可減少耗電量並提高性能，採用垂直引線鍵合的新封裝技術，被譽為“移動HBM”。其帶寬可達200GB/s以上，較現有的LPDDR5x提升166%。

三星計劃2028年推出“移動HBM”

TechInsights：2027年底DRAM預計將邁入個位數納米技術節點

三星開發下一代DRAM以提高AI手機計算性能

【三星開發下一代DRAM以提高AI手機計算性能】三星電子正在開發下一代DRAM，以最大限度地提高AI智能手機和PC的計算性能。為確保移動HBM的性能和穩定性，三星電子此前宣佈將利用柱柱連接堆疊的DRAM。

【擴大】中國擴大采用國產DRAM,全球DRAM價格連跌五月；AMD下一代Zen6架構產品計劃引入三星4nm工藝

全球半導體論壇：中國擴大采用國產DRAM，全球DRAM價格連跌五月

國產內存加速追趕！長鑫15nm DRAM今年開發明年量產

快科技官方

誓要提升良率！曝三星重新調整1cnm DRAM設計：確保HBM4量產

快科技官方

中國存儲芯片企業“滾雪球式”增長，“韓國該慌了”

DeepSeek R1模型引發投資者擔憂，小摩：邊緣AI需求上升或將刺激傳統DRAM市場增長

三星DRAM，要被反超了？

半导体行业观察

SK海力士：傳統DRAM市場今年將逐步調整。

SK海力士：HBM在四季度總體DRAM收入的佔比超過40%。

因良率問題，三星第六代10nm級1c DRAM 延後半年

【新股IPO】據報長鑫存儲考慮最早今年在香港上市

新股消息 | 傳長鑫存儲考慮最早今年赴港IPO

【中信證券：美國對華先進存儲限制再加碼，倒逼高端存儲產業鏈國產加速】中信證券研報表示，1月15日晚間，BIS修訂了《出口管理條例》，修改DRAM先進存儲定義，工藝節點仍為18nm，存儲單元面積及存儲密度由24年12月的1ynm變為1xnm，同時增加TSV通孔數限制，對HBM和先進DRAM的限制再加碼，倒逼產業鏈國產化加速。本次限制針對製造廠商及供應鏈，設計廠商業務正常開展，我們看好高端定製存儲業務，持續推薦。同時我們認為，後續在本土高端封測廠商和設備廠商的配合下，國內DRAM原廠有望突破HBM，佈局相關環節的廠商有望核心受益，看好高端存儲產業鏈國產替代。

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09:11","pubTimestamp":1740445879,"startTime":"0","endTime":"0","summary":"SK海力士2月25日发布消息称，韩国京畿道龙仁半导体集群内的SK海力士一期晶圆厂于昨日正式破土动工。SK海力士去年7月通过董事会决议，决定投资约9.4万亿韩元（约合66亿美元）建设龙仁半导体集群一期晶圆厂及相关办公设施。SK海力士计划在龙仁集群内分阶段建设四座晶圆厂，一期工厂预计2027年5月竣工。该工厂建成后将成为高带宽存储器（HBM）等新一代DRAM存储芯片生产基地。（科创板日报）","market":"us","thumbnail":"","type":0,"news_type":0,"thumbnails":[],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":null,"theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"https://24h.jrj.com.cn/2025/02/25091148361717.shtml","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"1","news_top_title":null,"news_tag":"corporation","news_rank":0,"length":0,"strategy_id":0,"source":"jinrongjie_stock","symbols":["159982","DRAM","159582","HBM","BK4168"],"gpt_icon":0},{"id":"2512497637","title":"三星電子芯片業務部門主管上週曾前往英偉達 攜帶新設計1b 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DRAM內存的首款移動產品將在2028年上市。LPW DRAM通過堆疊LPDDR DRAM，大幅增加I/O接口，可減少耗電量並提高性能，採用垂直引線鍵合的新封裝技術，被譽為“移動HBM”。其帶寬可達200GB/s以上，較現有的LPDDR5x提升166%。","url":"https://stock-news.laohu8.com/highlight/detail?id=2512235011","media":"金融界","labels":["productRelease"],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2512235011?lang=zh_tw&edition=fundamental","pubTime":"2025-02-19 13:40","pubTimestamp":1739943642,"startTime":"0","endTime":"0","summary":"三星电子半导体暨装置解决方案（DS）部门首席技术官宋在赫表示，搭载LPW DRAM内存的首款移动产品将在2028年上市。LPW DRAM通过堆叠LPDDR 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14:38","pubTimestamp":1739860722,"startTime":"0","endTime":"0","summary":"智通财经APP获悉，TechInsights平台上最新发布了T1-2025 DRAM视频简报。该视频简报提供了DRAM技术的详细信息、路线图更新、趋势、比较以及前景展望。到2027年底，TechInsights预计DRAM将迈入个位数纳米技术节点，如D0a，随后将是0b和0c世代。2025年第一季度，市场上将首次推出D1c的一小部分产品，首先由SK海力士推出。D1c世代将在2026年和2027年占据主导地位，包括HBM4 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15:08","pubTimestamp":1739257688,"startTime":"0","endTime":"0","summary":"多名分析人士预测，长鑫存储预计将出现“滚雪球式”增长，迅速抢占全球市场份额，继而威胁其韩国竞争对手三星、SK海力士在该领域的“主导地位”。据介绍，长鑫存储成立于2016年，当时中国几乎还不具备自主生产DRAM芯片的能力。这导致旧款DRAM芯片价格下跌，侵蚀了三星和SK海力士的利润率，并迫使这两家韩国公司退出低端市场。长鑫存储2023年首次推出了其最新的LPDDR5 DRAM存储芯片。","market":"us","thumbnail":"","type":0,"news_type":0,"thumbnails":[],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":null,"theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"https://finance.jrj.com.cn/2025/02/11150848073697.shtml","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"1","news_top_title":null,"news_tag":"dataReport","news_rank":0,"length":0,"strategy_id":0,"source":"jinrongjie_stock","symbols":["DRAM","BK4168","HBM"],"gpt_icon":0},{"id":"2509916807","title":"DeepSeek R1模型引發投資者擔憂，小摩：邊緣AI需求上升或將刺激傳統DRAM市場增長","url":"https://stock-news.laohu8.com/highlight/detail?id=2509916807","media":"智通财经","labels":[],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2509916807?lang=zh_tw&edition=fundamental","pubTime":"2025-02-07 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DRAM状况的消息。如果第六代10nm级1c DRAM制程从开发完成到量产的时间约为正常的6个月时间，则三星实际量产的时间预计将在2025年底。三星计划上半年全力投入六代10nm级1c DRAM制程，以尽快提高良率。韩国半导体产业人士指出，三星正在修改1c DRAM部分设计。","market":"us","thumbnail":null,"type":0,"news_type":0,"thumbnails":[],"rights":{"source":"tencent","url":"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN20250122104216abb3eb07&s=b","rn_cache_url":null,"customStyle":"body{padding-top:10px;}#news_title{font-weight:bold;#titleStyle#;}#news_description span{font-size:12px;#descriptionStyle#;}.footer-note{#statement#}","selectors":".mod-LoadTzbdNews, body","filters":".relate-stock, .hot-list, .recom-box, 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据媒体报道，动态随机存取存储芯片(DRAM)制造商长鑫存储考虑最早今年在香港上市，目前正与潜在财务顾问讨论相关事宜，计划集资约10亿美元(78亿港元)。公司专注于动态随机存取存储芯片设计、研发、生产和销售，目前相关产业主要是由三星电子、SK海力士及美光科技主导。","market":"sg","thumbnail":"https://static.szfiu.com/news/20250107/YjE3MzU0MjU2ODIzMjIz.png","type":0,"news_type":0,"thumbnails":["https://static.szfiu.com/news/20250107/YjE3MzU0MjU2ODIzMjIz.png"],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":null,"theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"1951902","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"0","news_top_title":null,"news_tag":"","news_rank":0,"length":0,"strategy_id":0,"source":null,"symbols":["BK4533","LU2360106780.USD","LU0082616367.USD","BK4553","BK4141","BK4579","BK4527","IE00B19Z3B42.SGD","LU0056508442.USD","MU","LU2250418816.HKD","BK4554","LU0792757196.USD","BK4512","BK4543","LU1267930813.SGD","IE0002270589.USD","LU2286300806.USD","BK4588","BK4575","LU0081259029.USD","LU2211815571.USD","GB00BDT5M118.USD","IE00B7SZLL34.SGD","LU1316542783.SGD","BK4585","BK4532","LU0127658192.USD","BK4566","LU0719512351.SGD","DRAM","LU1366333091.USD","LU0157215616.USD","IE00B19Z3581.USD","LU2048586759.USD","LU0889566641.SGD","LU1852331112.SGD","LU0642271901.SGD"],"gpt_icon":0},{"id":"2505493392","title":"新股消息 | 傳長鑫存儲考慮最早今年赴港IPO","url":"https://stock-news.laohu8.com/highlight/detail?id=2505493392","media":"智通财经","labels":[],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2505493392?lang=zh_tw&edition=fundamental","pubTime":"2025-01-21 17:32","pubTimestamp":1737451979,"startTime":"0","endTime":"0","summary":"智通财经APP获悉，据媒体消息，长鑫存储考虑最早今年在港股上市。此前，受市场环境动荡、半导体制造整体存在不确定性等因素的影响，长鑫存储选择推迟了IPO计划。资料显示，长鑫存储是一家一体化存储器制造公司，成立于2017年11月16日，总部位于合肥。截止目前，长鑫存储已完成多轮融资，其中包括兆易创新，长鑫集成、合肥产投等多名投资人共同参与。","market":"sh","thumbnail":null,"type":0,"news_type":0,"thumbnails":[],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":null,"theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"http://www.zhitongcaijing.com/content/detail/1241160.html","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"1","news_top_title":null,"news_tag":"","news_rank":0,"length":0,"strategy_id":0,"source":"stock_zhitongcaijing","symbols":["DRAM"],"gpt_icon":0},{"id":"2504478551","title":"【中信證券：美國對華先進存儲限制再加碼，倒逼高端存儲產業鏈國產加速】中信證券研報表示，1月15日晚間，BIS修訂了《出口管理條例》，修改DRAM先進存儲定義，工藝節點仍為18nm，存儲單元面積及存儲密度由24年12月的1ynm變為1xnm，同時增加TSV通孔數限制，對HBM和先進DRAM的限制再加碼，倒逼產業鏈國產化加速。本次限制針對製造廠商及供應鏈，設計廠商業務正常開展，我們看好高端定製存儲業務，持續推薦。同時我們認為，後續在本土高端封測廠商和設備廠商的配合下，國內DRAM原廠有望突破HBM，佈局相關環節的廠商有望核心受益，看好高端存儲產業鏈國產替代。","url":"https://stock-news.laohu8.com/highlight/detail?id=2504478551","media":"金融界","labels":["policyRegulatory"],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2504478551?lang=zh_tw&edition=fundamental","pubTime":"2025-01-18 09:54","pubTimestamp":1737165281,"startTime":"0","endTime":"0","summary":"中信证券研报表示，1月15日晚间，BIS修订了《出口管理条例》，修改DRAM先进存储定义，工艺节点仍为18nm，存储单元面积及存储密度由24年12月的1ynm变为1xnm，同时增加TSV通孔数限制，对HBM和先进DRAM的限制再加码，倒逼产业链国产化加速。本次限制针对制造厂商及供应链，设计厂商业务正常开展，我们看好高端定制存储业务，持续推荐。同时我们认为，后续在本土高端封测厂商和设备厂商的配合下，国内DRAM原厂有望突破HBM，布局相关环节的厂商有望核心受益，看好高端存储产业链国产替代。","market":"us","thumbnail":"","type":0,"news_type":0,"thumbnails":[],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":null,"theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"https://24h.jrj.com.cn/2025/01/18095447581437.shtml","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"1","news_top_title":null,"news_tag":"policyRegulatory","news_rank":0,"length":0,"strategy_id":0,"source":"jinrongjie_stock","symbols":["06030","BK0183","LU1064131003.USD","LU1720050803.USD","LU1997245094.SGD","LU2289578879.USD","BK0188","BK0028","LU2148510915.USD","600030","BK0196","LU0405327494.USD","LU2495084118.USD","LU1997245177.USD","BK1521","LU1794554557.SGD","BK0276","BIS","BK1147","DRAM","LU1064130708.USD","LU1328615791.USD","LU1997244956.HKD","LU0405327148.USD","BK1564","BK0012","BK1516"],"gpt_icon":0}],"pageSize":20,"totalPage":8,"pageCount":6,"totalSize":142,"code":"91000000","status":"200"}],"@#url:\"https://hq.skytigris.cn/fundamental/corporate_actions/details/DRAM\",params:#limit:5,,,undefined,":[{"date":"2017-06-26","symbol":"DRAM","newSymbol":"USAU","type":"symbolChange","dateTimestamp":1498449600000},{"market":"US","date":"2016-12-15","symbol":"DRAM","fiscalQuarterEnding":null,"expectedEps":null,"name":null,"time":"","type":"earning","dateTimestamp":1481778000000,"reportTimeType":"","actualEps":null},{"market":"US","date":"2016-09-15","symbol":"DRAM","fiscalQuarterEnding":null,"expectedEps":null,"name":null,"time":"","type":"earning","dateTimestamp":1473912000000,"reportTimeType":"","actualEps":null}],"@#url:\"https://hq.skytigris.cn/fundamental/dividend/history\",params:#symbol:\"DRAM\",market:\"US\",,,undefined,":[],"@#url:\"https://hq.skytigris.cn/fundamental/estimate/recommendation\",params:#symbol:\"DRAM\",market:\"US\",delay:false,,,undefined,":{}}}