7月14日，Tower半导体盘前飙升逾18%，该公司今日宣布，将并行双轨战略性地扩展其300毫米硅光子（SiPho）、硅锗（SiGe）和先进封装能力。日本在以下机构的支持下：日本政府此次扩建旨在满足快速增长的长期客户需求，大幅提升公司的生产能力，并巩固其技术领先地位。
7月14日，Tower半导体盘前飙升逾18%，该公司今日宣布，将并行双轨战略性地扩展其300毫米硅光子（SiPho）、硅锗（SiGe）和先进封装能力。日本在以下机构的支持下：日本政府此次扩建旨在满足快速增长的长期客户需求，大幅提升公司的生产能力，并巩固其技术领先地位。
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