On March 13, SICC stated in response to investor inquiries on an interactive platform that the company is progressing with the second-phase expansion plan for 8-inch silicon carbide substrate production at its Shanghai Lingang plant. The company will achieve the planned 8-inch substrate production capacity in stages. Construction of the "Silicon Carbide Materials Industry Project (Phase I)" in Jinan and the Malaysia factory is advancing as scheduled. SICC is one of the few companies globally capable of mass-producing 8-inch silicon carbide substrates and was among the first to commercialize substrates ranging from 2 inches to 8 inches. It also pioneered the launch of 12-inch silicon carbide substrates. Moving forward, the company will continue to innovate, building on its existing strengths to further expand its leadership in technology, production capacity, and market scale, providing higher-quality material solutions for the global semiconductor industry.