Roundhill Memory ETF（DRAM）今日盘前大涨5.01%，引起了市场的广泛关注。
消息面上，全球存储芯片市场供需失衡态势持续加剧。机构数据显示，今年DRAM供需缺口约8%，NAND闪存缺口约5%，且紧缺态势可能延续至2027年。与此同时，人工智能（AI）驱动的结构性需求成为核心增长动力，下一代AI服务器平台对DRAM容量的需求大幅拉升。
行业基本面强劲支撑市场情绪。今年第一季度，全球NAND闪存整体销售额环比大幅增长90%，DRAM内存销售额环比涨幅也达到80%。存储芯片价格持续上涨，行业景气度高涨。此外，行业巨头如SK海力士计划在2034年前将晶圆产能扩大至三倍，三星电子也计划新建先进封装工厂，这些积极的产能扩张计划进一步印证了市场长期需求的乐观预期。OpenAI首席执行官即将访问三星电子商讨AI合作事宜的消息，也强化了AI应用将带动存储芯片需求的预期。这些因素共同推动了追踪存储芯片行业的Roundhill Memory ETF在盘前交易时段显著上扬。
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