On May 17th, ChangXin Storage Technology Group Co., Ltd. (ChangXin Technology), a leading domestic DRAM manufacturer, updated its IPO prospectus for the Science and Technology Innovation Board (STAR Market), revealing its latest financial results, which significantly exceeded market expectations.

The prospectus indicates that for the first quarter of 2026, driven by sustained global growth in computing power demand and capacity adjustments by major global manufacturers, the global DRAM market experienced a supply shortage. Prices have shown a significant upward trend since the second half of 2025. Concurrently, with the continuous expansion of the company's production and sales scale and ongoing optimization of its product mix, its operating revenue grew rapidly.

Financial data shows that ChangXin Technology achieved operating revenue of 50.8 billion yuan in the first quarter, a year-on-year increase of 719.13%. Net profit reached 33.012 billion yuan, surging 1268.45% year-on-year. Net profit attributable to the parent company's owners amounted to 24.762 billion yuan, a substantial increase of 1688.30%.

The company forecasts that for the first half of 2026, operating revenue will range between 110 billion yuan and 120 billion yuan, representing a year-on-year growth of 612.53% to 677.31%. Net profit attributable to the parent company's owners is projected to be between 50 billion yuan and 57 billion yuan, marking a remarkable year-on-year increase of 2244.03% to 2544.19%.

ChangXin Technology completed its filing for IPO tutoring in July 2025 and received acceptance for its STAR Market IPO application in December of the same year, when it disclosed its prospectus. In March of this year, its review status was changed to "suspended." However, according to public media reports, this suspension was solely for the purpose of supplementing and updating performance data.

The company disclosed that the proceeds from this issuance will be used primarily for projects related to its core business. These include the technological upgrade and transformation project for the mass production line of memory wafer manufacturing, the DRAM memory technology upgrade project, and the forward-looking research and development project for dynamic random-access memory (DRAM).