Roundhill Memory ETF（代码：DRAM）今日盘前股价大幅上涨5.37%，表现强劲。
消息面上，此次上涨主要受到美股存储芯片概念股集体反弹的带动。隔夜美股交易中，费城半导体指数大涨，存储芯片巨头美光科技等公司股价显著攀升，带动了整个存储芯片板块的乐观情绪。此外，全球存储芯片行业正经历近15年来最严重的供应短缺，AI算力需求爆发驱动HBM等高性能存储需求激增，三星、美光、SK海力士等巨头集体提价，进一步推升了市场对存储芯片产业链景气度的预期。
行业分析指出，存储芯片作为人工智能等关键领域的基础设施，其供需紧张的格局受到广泛关注，这推动了相关ETF资产的价格上涨。同时，以色列与伊朗暂缓交火的消息缓解了地缘政治紧张局势，也为市场风险偏好回升提供了支撑。
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