Roundhill Memory ETF（DRAM）今日夜盘大涨5.00%，引起了市场的广泛关注。
消息面上，全球存储芯片供需失衡持续加剧，据机构数据，今年DRAM供需缺口约8%、NAND约5%，紧缺态势或延续至2027年。AI驱动的结构性需求增长是核心推力——智能体AI工作负载要求Key-Value缓存容量成比例扩展，下一代AI服务器平台大幅拉升DRAM容量需求。此外，一季度全球NAND存储市场营收环比接近翻倍，机构普遍判断存储涨价趋势将贯穿全年，海外原厂议价能力持续增强，这直接利好追踪存储芯片行业的ETF。
这些基本面因素共同推动了市场对存储芯片板块的乐观情绪，从而带动了Roundhill Memory ETF的价格在夜盘交易时段显著上扬。
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