美光科技（MU）今日夜盘大涨5.03%，引起了市场的广泛关注。
消息面上，美光科技宣布其位于新加坡现有NAND闪存制造园区内的先进晶圆制造厂正式破土动工，计划未来十年投资约240亿美元扩大产能，预计2028年下半年投产。该工厂将成为新加坡首座双层晶圆制造工厂，建成后将提供约70万平方英尺的无尘室空间，有助于满足由人工智能和数据驱动应用迅速扩张所带动的对NAND闪存不断增长的市场需求。
此外，美光此前宣布的位于同一新加坡制造园区的高带宽内存（HBM）先进封装工厂，预计将在2027年为美光的HBM供应做出重要贡献。随着HBM成为美光新加坡制造版图的一部分，该公司预计NAND和DRAM生产之间将出现协同效应的机会。这一重大投资计划增强了市场对美光科技在内存领域长期增长潜力的信心，从而推动了股价在夜盘时段的大幅上涨。
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