Roundhill Memory ETF（DRAM）今日盘前股价大涨5.08%，引起了市场的广泛关注。
消息面上，国际存储芯片巨头SK海力士宣布了积极的产能扩张计划，计划到2034年将芯片晶圆产能提高到目前的三倍，以满足人工智能发展带来的旺盛需求。同时，公司确认计划年内发行美国存托凭证（ADR）赴美上市，旨在借助AI热潮拓宽投资者基础。这些举措被视为对存储芯片行业的重大利好，提振了市场对整个板块的信心，从而推动了追踪该行业的ETF价格上涨。
SK海力士作为全球领先的存储芯片制造商，其产能扩张和资本运作计划反映了行业对AI驱动需求的长期乐观预期，这可能是Roundhill Memory ETF盘前表现强劲的主要原因。
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