Roundhill Memory ETF (代码：DRAM) 今日盘前交易中出现显著上涨，涨幅达5.07%，引起了市场关注。
消息面上，此次上涨主要受到存储芯片行业密集利好的推动。研究机构TrendForce集邦咨询全面上修了一季度存储器合约价预期，其中传统DRAM合约价的季度增幅预期从55%-60%大幅上调至90%-95%，NAND Flash合约价季度增幅预期也从33%-38%上调至55%-60%，且存在进一步上修空间。与此同时，行业高层及机构指出存储芯片供需持续紧张，高盛预计这种紧张态势将延续至2028年。
行业分析指出，当前DRAM市场存在约8%的供应缺口，NAND Flash市场缺口约为5%。人工智能与数据中心需求的强劲增长持续击穿市场供需平衡，使得存储芯片原厂的议价能力升至近年来的顶峰，整个存储行业正步入量价齐升的强势周期。此外，美股存储芯片板块盘前普遍反弹，也提振了追踪该行业的ETF表现。
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