Roundhill Memory ETF（代码：DRAM）今日盘中大涨8.65%，表现强劲，引起了市场的广泛关注。
消息面上，人工智能（AI）基础设施需求的爆发式增长，持续驱动对存储芯片，尤其是高带宽内存（HBM）的强劲需求。高盛、摩根大通等顶级投行发布报告指出，存储芯片行业正经历从强周期性大宗商品向AI基础设施战略资源的范式转变，估值框架有望重估，并因此上调了包括三星、SK海力士在内的行业巨头目标价。
此外，行业数据显示，第一季度全球DRAM销售额环比增长80%，同比暴增260%，创历史新高，AI数据中心对HBM及LPDDR5的强劲需求是核心驱动力。TrendForce等机构进一步大幅上调预测，预计全年DRAM市场规模同比增幅显著，供需缺口预计延续至2028年。同时，为确保供应，大型客户正积极抢签长期采购协议，这增强了市场对存储芯片行业盈利能见度和稳定性的预期，共同推动了资金涌入相关投资标的。
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