INNOSCIENCE (02577) saw its stock price surge by 14.99% in pre-market trading on Tuesday, following the announcement of its collaboration with NVIDIA to support the 800 VDC power architecture for next-generation AI datacenters. This partnership marks a significant breakthrough in the company's position within the rapidly growing AI infrastructure market.

The collaboration aims to revolutionize AI datacenter efficiency by leveraging INNOSCIENCE's advanced gallium nitride (GaN) technology. The 800 VDC rack power architecture is expected to bring unprecedented progress to AI data centers, enabling higher efficiency and power density while reducing energy consumption and carbon dioxide emissions. By increasing rack voltage from 48V to 800V, the new architecture can reduce current by 16 times, significantly lowering I²R losses and minimizing copper material requirements.

INNOSCIENCE's third-generation GaN technology offers decisive advantages over traditional solutions. On the 800V input side, it reduces driving losses by 80% and switching losses by 50% compared to silicon carbide. At the 54V output end, it achieves the same conduction losses as silicon MOSFETs with half the number of devices, doubling power density. As the industry's only full-stack GaN supplier and leading GaN IDM company, INNOSCIENCE is uniquely positioned to provide complete GaN power solutions for all conversion stages in the new architecture.

Investors are responding positively to INNOSCIENCE's potential to capture a significant share of the burgeoning AI infrastructure market. The company's ability to support the transition from kilowatt to megawatt racks in AI datacenters positions it as a key player in enabling more efficient, higher-performance, and environmentally friendly AI accelerated computing.