6月8日，Roundhill Memory ETF盘中上涨8.84%，报60.13美元/股，成交额7.18亿美元。
消息面上，全球存储芯片行业供需持续紧缺，DRAM缺口约8%、NAND缺口约5%，紧缺态势或延续至2027年。AI算力需求爆发推动HBM等高性能存储需求激增，HBM消耗产能达普通DRAM的2.5-3倍，进一步加剧供给紧张。三星、美光等巨头近期集体提价，DRAM协议价上涨15%-30%以上。此外，国内存储龙头长鑫存储、长江存储加速推进上市，行业扩产周期开启，设备全行业订单增速有望超30%，存储产能紧缺或成为贯穿全年的投资主线。
该ETF主要聚焦存储领域相关上市公司，覆盖网络服务器及工作站所用大容量存储产品的开发、制造及销售环节。
（以上内容均基于市场公开消息，由程序或算法智能生成，仅作为股价异动提醒，不作为投资建议或交易依据。）
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