Roundhill Memory ETF（DRAM）今日盘中大涨8.14%，引起了市场的广泛关注。
消息面上，存储芯片行业近期迎来多重利好。国际存储芯片巨头SK海力士宣布了积极的产能扩张计划，计划到2034年将芯片晶圆产能提高到目前的三倍，以满足人工智能发展带来的旺盛需求，同时公司确认计划年内发行美国存托凭证赴美上市。此外，全球存储芯片行业景气度持续高涨，一季度DRAM与NAND Flash市场规模同比大幅增长，价格持续飙升，行业估值逻辑正从“传统周期股”向“AI基础设施成长股”切换。这些因素共同提振了市场对整个存储芯片板块的信心，从而推动了追踪该行业的ETF价格大幅上涨。
SK海力士的产能扩张和资本运作计划，以及行业整体的高景气度，反映了市场对AI驱动下存储芯片长期需求的乐观预期，这被认为是Roundhill Memory ETF盘中表现强劲的主要原因。
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