5月26日，Roundhill Memory ETF（DRAM）盘中上涨8.95%，报58.325美元/股，成交额4.5亿美元。
消息面上，全球内存超级周期动能持续推动存储板块全线走强。AI数据中心消耗全球70%以上存储产能，单台AI训练服务器存储需求为传统服务器的8-10倍，HBM及企业级SSD订单已排至2027年。供给端方面，全球内存短缺预计持续至2026年后，新产能要到2028年才能释放，DRAM一季度合约价暴涨80%-95%，二季度再涨58%-63%。该ETF前三大持仓为美光科技（26.77%）、SK海力士（23.75%）、三星电子（18.55%），三者合计权重近70%，均在本轮超级周期中录得超100%的年内涨幅，带动ETF大幅走高。
（以上内容均基于市场公开消息，由程序或算法智能生成，仅作为股价异动提醒，不作为投资建议或交易依据。）
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