6月8日，Roundhill Memory ETF盘前上涨5.05%，报58.60美元/股，成交额4206万美元。
消息面上，近期多家机构密集发布存储行业研报，高盛明确指出当前DRAM-NAND-HBM超级周期仅处于中段而非顶点，供需紧张程度将延续至2028年。数据显示，二季度DRAM合约价环比上涨52%-63%，NAND涨幅突破70%，创近10年最大单季涨幅。全球DRAM、NAND、HBM供需缺口分别达4.9%、4.2%和5.1%，均为2011年以来最高水平。AI服务器出货量同比增长180%，单台AI服务器DRAM用量为传统服务器8-10倍，叠加三星、SK海力士、美光将70%以上先进产能转向HBM及DDR5，通用型产能收缩18%，库存处于历史低位，供需失衡格局短期内难以逆转。
Roundhill Memory ETF主要追踪全球存储芯片产业链相关标的，覆盖DRAM、NAND及HBM领域核心企业。
（以上内容均基于市场公开消息，由程序或算法智能生成，仅作为股价异动提醒，不作为投资建议或交易依据。）
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