异动解读|Roundhill Memory ETF夜盘上涨6.15%,机构全面上修存储芯片报价叠加供需持续紧张

行情直击
Jun 08

6月8日,Roundhill Memory ETF夜盘上涨6.15%,报59.22美元,成交额3278.24万美元。

消息面上,近期存储芯片行业利好密集释放。TrendForce集邦咨询全面上修一季度存储器合约价预期,整体Conventional DRAM合约价季增幅度从此前的55%-60%大幅上调至90%-95%,NAND Flash合约价从季增33%-38%上调至55%-60%,且不排除进一步上修空间。Arm首席执行官亦公开表示存储芯片供需持续紧张,高盛预计紧张态势将延续至2028年。行业层面,当前DRAM缺口约8%、NAND缺口约5%,AI与数据中心需求持续击穿供需平衡,原厂议价能力升至近年顶峰,存储行业正步入量价齐升的强势周期。

(以上内容均基于市场公开消息,由程序或算法智能生成,仅作为股价异动提醒,不作为投资建议或交易依据。)

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