异动解读|Roundhill Memory ETF夜盘上涨5.01%,存储超级周期供需缺口持续扩大

行情直击
Jun 09

6月9日,Roundhill Memory ETF夜盘上涨5.01%,报63.55美元/股,成交额6037.12万美元。

消息面上,全球存储芯片行业正经历近15年来最严重的供应短缺,DRAM缺口约8%、NAND缺口约5%,紧缺态势或延续至2027年。AI算力需求爆发驱动HBM等高性能存储需求激增,单台AI服务器DRAM用量达传统服务器8-10倍,HBM消耗产能为普通DRAM的2.5-3倍,进一步加剧供给紧张。三星、美光、SK海力士等巨头集体提价,DRAM协议价上涨15%-30%以上,机构上修合约价季增幅度至90%-95%。瑞银近期将美光目标价上调至1625美元,SK海力士赴美上市路演获"极度正面"反馈,产业链景气度持续上行。该ETF主要聚焦存储领域相关上市公司,覆盖网络服务器及工作站所用大容量存储产品的开发、制造及销售环节。

(以上内容均基于市场公开消息,由程序或算法智能生成,仅作为股价异动提醒,不作为投资建议或交易依据。)

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