专注于内存芯片行业的Roundhill Memory ETF（代码：DRAM）在今日盘前交易时段大涨5.27%，表现强劲。
消息面上，人工智能（AI）基础设施需求的爆发式增长，持续驱动对存储芯片，尤其是高带宽内存（HBM）的强劲需求。高盛等多家顶级投行发布报告指出，存储芯片行业正经历从强周期性大宗商品向AI基础设施战略资源的范式转变，估值框架有望从市净率（P/B）切换至市盈率（P/E），并因此上调了包括三星、SK海力士在内的行业巨头目标价。
此外，行业动态显示，AI竞赛日益“以内存为中心”，为确保供应，大型客户正积极抢签长期采购协议（LTA），这增强了市场对存储芯片行业盈利能见度和稳定性的预期。同时，有表现优异的科技基金明确表示押注存储芯片龙头，看好供应收紧带来的盈利增长前景，共同推动了资金涌入相关投资标的。
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