Roundhill Memory ETF（代码：DRAM）今日盘前大涨5.09%，引起了市场的广泛关注。
消息面上，全球存储芯片行业正处于由人工智能（AI）驱动的超级周期之中。据行业预测，全球DRAM需求增速远超供给增速，导致供需缺口持续扩大。与此同时，头部存储芯片企业业绩暴增，印证了行业的高景气度。供给端方面，主要厂商的产能利用率已接近上限，而高端产品如HBM（高带宽内存）进一步挤压了传统DRAM的产量，新增产能的投放存在滞后，短期内供给紧张的格局难以逆转，这支撑了价格的上涨趋势。
市场对内存行业未来景气度的预期持续升温，资金看好该赛道的发展前景，从而推动了追踪内存行业的Roundhill Memory ETF的价格上涨。
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