Roundhill Memory ETF（代码：DRAM）今日盘中大幅上涨5.22%，引起了市场的广泛关注。
消息面上，存储芯片板块普遍走强。核心驱动因素包括AI需求爆发导致的存储芯片极度紧缺，以及主要供应商产能中断风险的缓解。据报道，全球多家科技巨头正以罕见方式向存储芯片巨头SK海力士提出出资建设专属产线甚至购买光刻机设备的提议，以锁定AI芯片供应，这凸显了在AI浪潮推动下存储芯片需求的旺盛和供给的紧张。
与此同时，另一存储芯片巨头三星电子的劳资谈判取得重要进展，双方已恢复谈判并进入调解程序，这显著降低了市场对于潜在罢工导致产能中断的担忧。这些因素共同强化了市场对存储芯片行业进入“超级周期”的预期，推动了以内存芯片为投资主题的Roundhill Memory ETF的价格上涨。
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