Roundhill Memory ETF（代码：DRAM）今日盘中大幅上涨5.03%，引起了市场的广泛关注。
消息面上，存储芯片行业基本面表现极为强劲。据最新数据显示，韩国5月前20天DRAM出口额同比飙升498%，反映出全球AI基础设施投资浪潮下，存储芯片需求持续爆发。与此同时，行业研究机构群智咨询预测，2026年第二季度全球存储芯片市场将延续超级周期，价格继续上行，其中消费电子用DRAM供应紧张局面未缓解。此外，全球存储芯片龙头三星电子成功避免了潜在的罢工危机，稳定了市场对供应链的预期，也提振了投资者情绪。
综合来看，在AI算力需求主导产能分配、行业供需格局持续紧张的背景下，存储芯片市场景气度高涨，直接推动了追踪该行业的Roundhill Memory ETF价格走强。
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