7月6日， 英特尔盘前涨超3%。英特尔正在评估一套面向1.4nm级制程的双面供电方案，试图在先进制程竞争中缩小与其他晶圆代工厂的差距。
按照原有规划，英特尔将在基础14A节点采用自研背面供电网络PowerDirect，也就是通过晶圆背面为晶体管供电，从而释放正面布线空间，并提升芯片功耗与信号传输效率。目前，公司正在进一步评估14A2节点的混合式方案，即同时利用晶圆正面和背面金属层进行电力路径设计。该方案并不是完全替代背面供电，而是在背面供电基础上，引入正背面协同布线，以应对更先进节点下的制造限制。
推动这一调整的原因主要来自光刻和金属层间距收缩压力。随着最小金属层间距向约21纳米推进，制造过程中随机缺陷风险上升，单一供电和布线路径面临更高工艺难度。双面供电架构的评估，反映出英特尔在14A2节点上对良率、功耗和布线密度进行进一步优化。
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