On Monday, shares of Navitas Semiconductor (NVTS.US) experienced a significant increase, rising over 16% to $17.1 as of the time of publication. The company recently announced the launch of a new line of power semiconductor products specifically designed for NVIDIA's (NVDA.US) 800 VDC AI facility power architecture. The new offerings include 100V GaN FETs, 650V GaN devices, and high-voltage SiC (silicon carbide) products. Management indicated that these new products are aimed at significantly enhancing energy efficiency, power density, and operational performance, providing groundbreaking power solutions for AI data centers. The 800 VDC architecture developed by NVIDIA serves as a new power distribution system tailored for AI facilities, capable of supporting large-scale, high-performance AI workloads. This architecture directly supplies power to IT racks, driving AI infrastructure including the Rubin Ultra. The 100V GaN FET products introduced by Navitas Semiconductor demonstrate clear advantages in efficiency, power density, and thermal management, while the 650V GaN combination integrates GaNSafe power ICs, which consolidate driving, control, sensing, and protection functions, facilitating NVIDIA's transition from traditional architectures to 800 VDC.