追踪全球存储芯片行业的Roundhill Memory ETF（代码DRAM）今日盘中大跌7.84%，市场表现显著疲软。
消息面上，多重利空因素共同打压了该ETF的表现。首先，美国九大行业团体联合致函政府，警告人工智能数据中心的扩张正导致全球存储芯片出现严重短缺和价格飙升，引发了市场对政策干预或需求结构变化的担忧。其次，市场对存储芯片行业见顶的讨论升温，价格松动、增速放缓等信号压制了板块情绪。此外，美国半导体巨头博通公布的AI芯片销售指引不及预期，拖累费城半导体指数下跌，恐慌情绪传导至全球市场。
作为该ETF重要成分股的韩国存储芯片巨头三星电子和SK海力士在亚洲交易时段暴跌，外资持续抛售韩国半导体类股，进一步加剧了该ETF的下行压力。
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