因良率问题,三星第六代10nm级1c DRAM 延后半年

芯智讯
22 Jan

1月21日消息,据韩国媒体MoneyToday报导,DRAM大厂三星电子之前宣称其第六代10nm级1c DRAM制程2024年底开发完并量产,但良率没有提升,导致开发延后6个月到2025年6月才能完成,这也会使预定下半年量产的第六代高频宽内存(HBM4)一并延后。报导引用市场人士说法,三星电子第六代10nm级1c DRAM制程遇到困难。尽管在2024年底左右,获得了三星送交的第一个测试芯片,但因为...

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